The Japanese company stated that its new SSD model is based on 43 nm Multi-Level Cell NAND and it will be used in notebook computers, gaming and home entertainment systems.

"The solid state drive market is evolving rapidly, with higher performance drives to meet market requirements, and differentiated product families targeted for appropriate applications,” said Mr. Kiyoshi Kobayashi, Vice President of Toshiba Corporation’s Semiconductor Company. "This new 43nm SSD family balances value/performance characteristics for its targeted consumer applications, through use of MLC NAND and an advanced controller architecture."

In addition to the 512GB drive, Toshiba’s 43nm NAND SSD family also includes smaller SSD in size of 64GB, 128GB, and 256GB, available in both 1.8-inch or 2.5-inch drive enclosures or as SSD Flash Modules.

The second generation SSDs utilizes an advanced MLC controller, thus achieving higher read/write speeds, parallel data transfers and wear leveling to optimize performance, reliability and endurance. According to Toshiba, the read speed of the new drives can reach a maximum sequential read speed of 240MBp) and maximum sequential write speed of 200MBps.

In addition, the drives offer AES data encryption to prevent unauthorized data access.